TuisMRAM • NASDAQ
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Everspin Technologies Inc
Vorige sluiting
$6,38
Dagwisseling
$6,17 - $6,39
Jaarwisseling
$4,89 - $9,39
Markkapitalisasie
136,01 m USD
Gemiddelde volume
118,51 k
P/V-verhouding
90,05
Dividend-opbrengs
-
Primêre beurs
NASDAQ
Marknuus
Finansieel
Inkomstestaat
Inkomste
Netto inkomste
(USD) | Sep. 2024info | J/J-verandering |
---|---|---|
Inkomste | 12,09 m | -26,56% |
Bedryfskoste | 8,07 m | 1,60% |
Netto inkomste | 2,27 m | -6,85% |
Netto winsgrens | 18,78 | 26,81% |
Wins per aandeel | 0,17 | 1,39% |
EBITDA | -1,71 m | -175,56% |
Effektiewe belastingkoers | 0,44% | — |
Balansstaat
Totale bates
Totale aanspreeklikheid
(USD) | Sep. 2024info | J/J-verandering |
---|---|---|
Kontant en korttermynbeleggings | 39,59 m | 13,32% |
Totale bates | 72,60 m | 15,25% |
Totale aanspreeklikheid | 13,33 m | 5,45% |
Totale ekwiteit | 59,27 m | — |
Uitstaande aandele | 21,97 m | — |
Prys om te bespreek | 2,35 | — |
Opbrengs op bates | -7,71% | — |
Opbrengs op kapitaal | -8,46% | — |
Kontantvloei
Netto kontantverandering
(USD) | Sep. 2024info | J/J-verandering |
---|---|---|
Netto inkomste | 2,27 m | -6,85% |
Kontant van bedrywe | 2,84 m | -20,17% |
Kontant van beleggings | -63,00 k | -270,59% |
Kontant van finansiering | 49,00 k | -91,34% |
Netto kontantverandering | 2,82 m | -31,19% |
Beskikbare kontantvloei | -768,88 k | -133,01% |
Meer oor
Everspin Technologies, Inc. is a publicly traded semiconductor company headquartered in Chandler, Arizona, United States. It develops and manufactures discrete magnetoresistive RAM or magnetoresistive random-access memory products, including Toggle MRAM and Spin-Transfer Torque MRAM product families. It also licenses its technology for use in embedded MRAM applications, magnetic sensor applications as well as performs backend foundry services for eMRAM.
MRAM has the performance characteristics close to static random-access memory while also having the persistence of non-volatile memory, meaning that it will not lose its charge or data if power is removed from the system. This characteristic makes MRAM suitable for a large number of applications where persistence, performance, endurance and reliability are critical. Wikipedia
Gestig
2008
Hoofkwartier
Webwerf
Werknemers
83