AvalehtMRAM • NASDAQ
add
Everspin Technologies Inc
Viimane sulgemishind
6,38 $
Tänane vahemik
6,17 $ - 6,39 $
Aasta vahemik
4,89 $ - 9,39 $
Turuväärtus
136,01 mln USD
Keskmine maht
118,51 tuh
P/E suhe
90,05
Dividendimäär
-
Põhibörs
NASDAQ
Börsiuudised
Finantsandmed
Kasumiaruanne
Käive
Puhastulu
(USD) | sept 2024info | Y/Y muutus |
---|---|---|
Käive | 12,09 mln | −26,56% |
Põhitegevusega seonduv kulu | 8,07 mln | 1,60% |
Puhastulu | 2,27 mln | −6,85% |
Puhaskasumimarginaal | 18,78 | 26,81% |
Puhaskasum aktsia kohta | 0,17 | 1,39% |
EBITDA | −1,71 mln | −175,56% |
Tõhus maksumäär | 0,44% | — |
Bilansiaruanne
Kogu vara
Kõik kohustused
(USD) | sept 2024info | Y/Y muutus |
---|---|---|
Sularaha ja lühiajalised investeeringud | 39,59 mln | 13,32% |
Kogu vara | 72,60 mln | 15,25% |
Kõik kohustused | 13,33 mln | 5,45% |
Kogu omakapital | 59,27 mln | — |
Emiteeritud aktsiate arv | 21,97 mln | — |
Hinna ja väärtuse suhe P/B | 2,35 | — |
Varade tasuvus | −7,71% | — |
Kapitali tasuvus | −8,46% | — |
Rahavoog
Raha ja raha ekvivalentide muutus
(USD) | sept 2024info | Y/Y muutus |
---|---|---|
Puhastulu | 2,27 mln | −6,85% |
Põhitegevuse rahakäive | 2,84 mln | −20,17% |
Investeeringute raha | −63,00 tuh | −270,59% |
Finantseerimise raha | 49,00 tuh | −91,34% |
Raha ja raha ekvivalentide muutus | 2,82 mln | −31,19% |
Tasuta rahavoog | −768,88 tuh | −133,01% |
Teave
Everspin Technologies, Inc. is a publicly traded semiconductor company headquartered in Chandler, Arizona, United States. It develops and manufactures discrete magnetoresistive RAM or magnetoresistive random-access memory products, including Toggle MRAM and Spin-Transfer Torque MRAM product families. It also licenses its technology for use in embedded MRAM applications, magnetic sensor applications as well as performs backend foundry services for eMRAM.
MRAM has the performance characteristics close to static random-access memory while also having the persistence of non-volatile memory, meaning that it will not lose its charge or data if power is removed from the system. This characteristic makes MRAM suitable for a large number of applications where persistence, performance, endurance and reliability are critical. Wikipedia
Asutatud
2008
Veebisait
Töötajate arv
83